Two-particle tight-binding description of higher-harmonic generation in semiconductor nanostructures

We develop a quantum mechanical theory to describe the optical response of semiconductor nanostructures with particular emphasis on higher-order harmonic Generation. Based tight-binding approach we take all two-particle correlations into account thus describing creation, evolution and annihilation electron holes. In limiting case bulk materials, obtain same precision as that achieved by solving well-established Bloch Equations. For semiconducting structures finite extent, also incorporate surrounding space enabling description emission. addition, different relaxation mechanisms such dephasing damping intraband currents. Moreover, advantage our is that, starting from extremely precise material data e.g., parameters obtained density-functional-theory calculations, numerical being far less computationally challenging resource-demanding comparable ab-initio approaches, those based time-dependent density functional theory.